Silicon measurement has been a reliable reference to develop valid models for circuit simulations. However, high-frequency silicon characterization requires specialized measurement equipment, calibration methods, design of test structures, and engineering expertise that complicates the generation of solid measurement-based models. Large-scale EM simulations have emerged as an alternative to the lack of high-frequency silicon data, but reliable EM simulations bring additional challenges. EM models require solver engines with fullwave capabilities, 3D accuracy, and broad-band accuracy (DC-TeraHz).
PeakView® provides a consolidated 3D EM-based de-embedding framework that integrates measurements and fullwave 3D EM simulation of test structures and device-under-tests (DUTs) for a direct comparison with silicon data. PeakView®’s framework represents a more efficient flow, where designers can further validate the reliability of the foundry process technology information as well as the quality of the test structures before fabrication. This methodology has been verified using silicon measurement data, showing excellent agreement over a broad frequency range extending into the sub-THz domain.
THREE-Step De-embedding Methods
PeakView®’s de-embedding framework includes methods based on one, two and three standards (open, short, and thru) to extract the real performance of the device under test without the effect of measurement pads. With both EM simulation and measurement data, multiple de-embedding strategies are studied: PeakView®’s de-embedding study based on EM simulation provides the “as is” simulation capability to electromagnetically simulate the entire de-embedding structures and devices. With the EM simulation data, multiple de-embedding strategies are studied:
- The system error introduced in de-embedding algorithms is quantified.
- Potential flaws in the test structures are captured earlier without silicon cost and time lost.
- EM simulation of multiple test-structures leads to the fabrication of better designs leading to more efficient silicon characterization.
- Automation of test structure generation can be realized based on PeakView®’s EM design
Specialized De-Embedding Algorithms for Transmission Lines up to TeraHz Frequencies
- PeakView® includes extensive scripting capabilities allowing the implementation of new algorithms such as the cascade method to enable the silicon characterization of long transmission lines at extremely high frequencies and enable the most demanding silicon photonic needs.
- PeakView®’s patented de-embedding method for transmission lines exploits the simplicity of transmission line design as it requires the simplest de-embedding test keys represented by only two identical transmission lines of arbitrary ratio between them.
- As illustrated in the following flowchart, this 3D EM-based de-embedding workflow starts with the DUTs (a 400um T-line), and its performance is de-embedded based on the EM simulation of another identical transmission line of arbitrary length (500um, 600um, 1000um, etc).
- This transmission line de-embedding method also accounts for the behavior of tapered pad connections, delivering a comprehensive silicon characterization solution.
- PeakView®’s 3D EM accuracy is imperative to deliver EM simulation results that includes all EM effects associated with high-frequency operation such as skin effect, proximity effect, etc, which allows the close correlation with silicon data.
- Lorentz Solution Inc. Accurate Cascade De-Embedding Method for RF, MMwave and Photonics Transmission Lines. U.S. Patent Pending.
References
- LD16217_PeakView De-embedding Feature
- LD20729 3D Fullwave EM Synthesis Optimization and Sign-off for the New Silicon Photonics Time
- Lorentz Solution Inc. Accurate Cascade De-Embedding Method for RF, MMwave and Photonics Transmission Lines. U.S. Patent Pending.
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